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ДАТА ЭКСПОРТА:5 апр. 20 г.

Zhao, Y., Yao, J., Xu, L., Mankin, M.N., Zhu, Y., Wu, H., Mai, L., Zhang, Q., Lieber, C.M.
Shape-Controlled Deterministic Assembly of Nanowires
(2016) Nano Letters, 16 (4), pp. 2644-2650.
https://www.scopus.c…5c6cfe81d4

DOI: 10.1021/acs.nanolett.6b00292
ОРГАНИЗАЦИИ: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA  02138, United States;
Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA  02138, United States;
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China;
CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui  230027, China
КРАТКОЕ ОПИСАНИЕ: Large-scale, deterministic assembly of nanowires and nanotubes with rationally controlled geometries could expand the potential applications of one-dimensional nanomaterials in bottom-up integrated nanodevice arrays and circuits. Control of the positions of straight nanowires and nanotubes has been achieved using several assembly methods, although simultaneous control of position and geometry has not been realized. Here, we demonstrate a new concept combining simultaneous assembly and guided shaping to achieve large-scale, high-precision shape controlled deterministic assembly of nanowires. We lithographically pattern U-shaped trenches and then shear transfer nanowires to the patterned substrate wafers, where the trenches serve to define the positions and shapes of transferred nanowires. Studies using semicircular trenches defined by electron-beam lithography yielded U-shaped nanowires with radii of curvature defined by inner surface of the trenches. Wafer-scale deterministic assembly produced U-shaped nanowires for >430 000 sites with a yield of ∼90%. In addition, mechanistic studies and simulations demonstrate that shaping results in primarily elastic deformation of the nanowires and show clearly the diameter-dependent limits achievable for accessible forces. Last, this approach was used to assemble U-shaped three-dimensional nanowire field-effect transistor bioprobe arrays containing 200 individually addressable nanodevices. By combining the strengths of wafer-scale top-down fabrication with diverse and tunable properties of one-dimensional building blocks in novel structural configurations, shape-controlled deterministic nanowire assembly is expected to enable new applications in many areas including nanobioelectronics and nanophotonics. © 2016 American Chemical Society.
КЛЮЧЕВЫЕ СЛОВА АВТОРА: bioelectronics;  elastic deformation;  field-effect transistors;  nanoelectronics;  nanowire arrays;  Silicon nanowires
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: Hertz Foundation.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: Harvard University.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: 2013DFA50840.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: Air Force Office of Scientific Research, AFOSR.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: National Science Foundation, NSF.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: National Basic Research Program of China (973 Program), 2013CB934103.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: National Science Fund for Distinguished Young Scholars, 51425204.
ТЕКСТ О ФИНАНСИРОВАНИИ: 1: C.M.L. acknowledges support from Air Force Office of Scientific Research. L.M. acknowledges support from National Basic Research Program of China (2013CB934103), International Science and Technology Corporation Program of China (2013DFA50840), and the National Natural Science Fund for Distinguished Young Scholars (51425204). M.N.M. acknowledges a Fannie and John Hertz Foundation Graduate Fellowship and a NSF Graduate Research Fellowship. This work was performed in part at the Center for Nanoscale Systems (CNS) of Harvard University.
АДРЕС ДЛЯ КОРРЕСПОНДЕНЦИИ: Lieber, C.M.; Department of Chemistry and Chemical Biology, Harvard UniversityUnited States; эл. почта: cml@cmliris.harvard.edu
ИЗДАТЕЛЬ: American Chemical Society

ЯЗЫК ОРИГИНАЛЬНОГО ДОКУМЕНТА: English
СОКРАЩЕННОЕ НАЗВАНИЕ ИСТОЧНИКА: Nano Lett.
СТАДИЯ ПУБЛИКАЦИИ: Final

Qing, Q., Jiang, Z., Xu, L., Gao, R., Mai, L., Lieber, C.M.
Free-standing kinked nanowire transistor probes for targeted intracellular recording in three dimensions
(2014) Nature Nanotechnology, 9 (2), pp. 142-147.
https://www.scopus.c…72fb85bbda

DOI: 10.1038/nnano.2013.273
ОРГАНИЗАЦИИ: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States;
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan 430070, China;
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, United States
КРАТКОЕ ОПИСАНИЕ: Recording intracellular (IC) bioelectrical signals is central to understanding the fundamental behaviour of cells and cell networks in, for example, neural and cardiac systems. The standard tool for IC recording, the patch-clamp micropipette is applied widely, yet remains limited in terms of reducing the tip size, the ability to reuse the pipette and ion exchange with the cytoplasm. Recent efforts have been directed towards developing new chip-based tools, including micro-to-nanoscale metal pillars, transistor-based kinked nanowires and nanotube devices. These nanoscale tools are interesting with respect to chip-based multiplexing, but, so far, preclude targeted recording from specific cell regions and/or subcellular structures. Here we overcome this limitation in a general manner by fabricating free-standing probes in which a kinked silicon nanowire with an encoded field-effect transistor detector serves as the tip end. These probes can be manipulated in three dimensions within a standard microscope to target specific cells or cell regions, and record stable full-amplitude IC action potentials from different targeted cells without the need to clean or change the tip. Simultaneous measurements from the same cell made with free-standing nanowire and patch-clamp probes show that the same action potential amplitude and temporal properties are recorded without corrections to the raw nanowire signal. In addition, we demonstrate real-time monitoring of changes in the action potential as different ion-channel blockers are applied to cells, and multiplexed recording from cells by independent manipulation of two free-standing nanowire probes. © 2014 Macmillan Publishers Limited. All rights reserved.
ХИМИКАТЫ/CAS:silicon, 7440-21-3
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: 2013DFA50840.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: National Institutes of Health, NIH, 5DP1OD003900.
СВЕДЕНИЯ О ФИНАНСИРОВАНИИ: National Basic Research Program of China (973 Program), 2013CB934103.
ТЕКСТ О ФИНАНСИРОВАНИИ: 1: C.M.L. acknowledges support of this work by a National Institutes of Health Director’s Pioneer Award (5DP1OD003900), National Basic Research Program of China (2013CB934103), and International Science & Technology Corporation Program of China (2013DFA50840).
ИЗДАТЕЛЬ: Nature Publishing Group

ЯЗЫК ОРИГИНАЛЬНОГО ДОКУМЕНТА: English
СОКРАЩЕННОЕ НАЗВАНИЕ ИСТОЧНИКА: Nat. Nanotechnol.
СТАДИЯ ПУБЛИКАЦИИ: Final

Xu, L., Jiang, Z., Qing, Q., Mai, L., Zhang, Q., Lieber, C.M.
Design and synthesis of kinked nanowire structures for nanoelectronic bioprobes
(2013) Nanophotonics, Nanoelectronics and Nanosensor, N3 2013, pp. NSu1A.2.
https://www.scopus.c…b12a0f5fbc

ОРГАНИЗАЦИИ: WUT-Harvard Joint Nano Key Laboratory, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, University of Technology, Wuhan 430070, China;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States;
School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, United States
КРАТКОЕ ОПИСАНИЕ: We present design and synthesis of diverse functional kinked nanowire structures for nanoelectronic bioprobes, including (1) U-shaped KNWs with a nanoFET at the tip of the "U," (2) V-shaped KNWs with series multi-nanoFETs along the arm and at the tip of the "V," and (3) Wshaped multiplexed KNWs integrating nanoFETs at the two tips of "W". © OSA 2013.
АДРЕС ДЛЯ КОРРЕСПОНДЕНЦИИ: Xu, L.; WUT-Harvard Joint Nano Key Laboratory, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, University of Technology, Wuhan 430070, China; эл. почта: xulin678@163.com

ЯЗЫК ОРИГИНАЛЬНОГО ДОКУМЕНТА: English
СОКРАЩЕННОЕ НАЗВАНИЕ ИСТОЧНИКА: Nanophot. Nanoelectron. Nanosensor
СТАДИЯ ПУБЛИКАЦИИ: Final

Xu, L., Jiang, Z., Qing, Q., Mai, L., Zhang, Q., Lieber, C.M.
Design and synthesis of diverse functional kinked nanowire structures for nanoelectronic bioprobes
(2013) Nano Letters, 13 (2), pp. 746-751.
https://www.scopus.c…986a432638

DOI: 10.1021/nl304435z
ОРГАНИЗАЦИИ: WUT-Harvard Joint Nano Key Laboratory, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States;
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, United States
КРАТКОЕ ОПИСАНИЕ: Functional kinked nanowires (KNWs) represent a new class of nanowire building blocks, in which functional devices, for example, nanoscale field-effect transistors (nanoFETs), are encoded in geometrically controlled nanowire superstructures during synthesis. The bottom-up control of both structure and function of KNWs enables construction of spatially isolated point-like nanoelectronic probes that are especially useful for monitoring biological systems where finely tuned feature size and structure are highly desired. Here we present three new types of functional KNWs including (1) the zero-degree KNW structures with two parallel heavily doped arms of U-shaped structures with a nanoFET at the tip of the "U", (2) series multiplexed functional KNW integrating multi-nanoFETs along the arm and at the tips of V-shaped structures, and (3) parallel multiplexed KNWs integrating nanoFETs at the two tips of W-shaped structures. First, U-shaped KNWs were synthesized with separations as small as 650 nm between the parallel arms and used to fabricate three-dimensional nanoFET probes at least 3 times smaller than previous V-shaped designs. In addition, multiple nanoFETs were encoded during synthesis in one of the arms/tip of V-shaped and distinct arms/tips of W-shaped KNWs. These new multiplexed KNW structures were structurally verified by optical and electron microscopy of dopant-selective etched samples and electrically characterized using scanning gate microscopy and transport measurements. The facile design and bottom-up synthesis of these diverse functional KNWs provides a growing toolbox of building blocks for fabricating highly compact and multiplexed three-dimensional nanoprobes for applications in life sciences, including intracellular and deep tissue/cell recordings. © 2012 American Chemical Society.
КЛЮЧЕВЫЕ СЛОВА АВТОРА: field-effect transistor;  nanoprobe;  nanosensor;  Silicon nanowire
АДРЕС ДЛЯ КОРРЕСПОНДЕНЦИИ: Lieber, C.M.; WUT-Harvard Joint Nano Key Laboratory, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; эл. почта: cml@cmliris.harvard.edu

ЯЗЫК ОРИГИНАЛЬНОГО ДОКУМЕНТА: English
СОКРАЩЕННОЕ НАЗВАНИЕ ИСТОЧНИКА: Nano Lett.
СТАДИЯ ПУБЛИКАЦИИ: Final

Jiang, X., Tian, B., Xiang, J., Qian, F., Zheng, G., Wang, H., Mai, L., Lieber, C.M.
Rational growth of branched nanowire heterostructures with synthetically encoded properties and function
(2011) Proceedings of the National Academy of Sciences of the United States of America, 108 (30), pp. 12212-12216.
https://www.scopus.c…4dc6c616be

DOI: 10.1073/pnas.1108584108
ОРГАНИЗАЦИИ: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States;
School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, United States;
Koch Institute for Integrative Cancer Research, Massachusetts Institute of Technology, Cambridge, MA 02142, United States;
Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093, United States;
Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA 95064, United States;
Laboratory of Advanced Materials, Department of Chemistry, Fudan University, Shanghai, 200438, China;
School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, 310027, China;
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology-Harvard Joint Nano Key Lab., Wuhan University of Technology, Wuhan, 430070, China
КРАТКОЕ ОПИСАНИЕ: Branched nanostructures represent unique, 3D building blocks for the "bottom-up" paradigm of nanoscale science and technology. Here, we report a rational, multistep approach toward the general synthesis of 3D branched nanowire (NW) heterostructures. Single-crystalline semiconductor, including groups IV, III-V, and II-VI, and metal branches have been selectively grown on core or core/shell NW backbones, with the composition, morphology, and doping of core (core/shell) NWs and branch NWs well controlled during synthesis. Measurements made on the different composition branched NW structures demonstrate encoding of functional p-type/n-type diodes and light-emitting diodes (LEDs) as well as field effect transistors with device function localized at the branch/backbone NW junctions. In addition, multibranch/ backbone NW structures were synthesized and used to demonstrate capability to create addressable nanoscale LED arrays, logic circuits, and biological sensors. Our work demonstrates a previously undescribed level of structural and functional complexity in NW materials, and more generally, highlights the potential of bottom-up synthesis to yield increasingly complex functional systems in the future.
КЛЮЧЕВЫЕ СЛОВА АВТОРА: Biosensors;  Designed synthesis;  Nanodevices;  Nanoelectronics;  Nanophotonics
АДРЕС ДЛЯ КОРРЕСПОНДЕНЦИИ: Lieber, C.M.; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States; эл. почта: cml@cmliris.harvard.edu

ЯЗЫК ОРИГИНАЛЬНОГО ДОКУМЕНТА: English
СОКРАЩЕННОЕ НАЗВАНИЕ ИСТОЧНИКА: Proc. Natl. Acad. Sci. U. S. A.
СТАДИЯ ПУБЛИКАЦИИ: Final